Athanasios T. Ramkaj: Multi-Gigahertz Nyquist Analog-to-Digital Converters
Multi-Gigahertz Nyquist Analog-to-Digital Converters
Buch
- Architecture and Circuit Innovations in Deep-Scaled CMOS and FinFET Technologies
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- Springer International Publishing, 01/2024
- Einband: Kartoniert / Broschiert, Paperback
- Sprache: Englisch
- ISBN-13: 9783031227110
- Bestellnummer: 11734274
- Umfang: 296 Seiten
- Nummer der Auflage: 24001
- Auflage: 1st ed. 2023
- Gewicht: 452 g
- Maße: 235 x 155 mm
- Stärke: 17 mm
- Erscheinungstermin: 14.1.2024
- Serie: Analog Circuits and Signal Processing
Achtung: Artikel ist nicht in deutscher Sprache!
Weitere Ausgaben von Multi-Gigahertz Nyquist Analog-to-Digital Converters
Klappentext
This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed / power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy speed power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy speed power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies.The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies.
Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;
Describes novel methods and techniques to push the accuracy speed power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits trade-offs across the entire ADC chain;
Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;
Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.